Article ID Journal Published Year Pages File Type
5359344 Applied Surface Science 2011 7 Pages PDF
Abstract
▶ A thin Si interlayer prevents the oxidation of the substrate in Ge based metal-gate/high-k stacks. ▶ Hard X-ray photoelectron spectroscopy enables a non-destructive analysis of interfaces buried several nanometers. ▶ A Hf silicate is formed at the interface between HfO2 and SiO2.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Probing buried interfaces on Ge-based metal gate/high-k stacks by hard X-ray photoelectron spectroscopy
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