Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5359499 | Applied Surface Science | 2010 | 6 Pages |
Abstract
This paper addresses the in situ growth stress evolution and post-growth stress relaxation during the phase separation of immiscible Fe0.51Cu0.49 thin films at various in situ deposition temperatures. Each film was sputter-deposited onto a 10 nm Si3N4 underlayer that was grown on top of Si [0 0 1] substrate at 25 °C, 145 °C, 205 °C, 265 °C or 325 °C. The thin film stress was measured using a wafer curvature technique. The in situ growth stress increased in compression with increasing substrate temperature. The stress relaxation of the Fe0.51Cu0.49 was found to have a linear increase with the inverse grain size for films deposited at temperatures greater than 205 °C. The stress state was correlated to the films' phase and morphology by X-ray diffraction, (scanning) transmission electron microscopy and atomic force microscopy techniques.
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Authors
B. Fu, G.B. Thompson,