Preparation of silicon oxycarbide films by laser ablation of SiO/3C-SiC multicomponent targets

Amorphous silicon oxycarbide (SiOC) films were prepared on Si (1 0 0) substrates by laser ablation at 773 K using mixed targets with different ratios of SiO to 3C-SiC. The structure and composition of the as-deposited films as a function of target content were investigated. With increasing the SiO content in the targets, the contents of Si-C and Si-O-C bonds decreased while that of Si-O bond increased. The mixing ratio of the targets had a dominant effect on the film composition and the stoichiometry of silicon oxycarbide films could be controlled by varying the mixing ratio of the targets.