Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5359833 | Applied Surface Science | 2010 | 4 Pages |
Abstract
Single crystalline wurtzite a-plane GaN films were deposited on (3 0 2) LiAlO2 (LAO) substrates by metal organic chemical vapor deposition (MOCVD). The high resolution X-ray diffraction (HRXRD) results and selected area electron diffraction (SAED) patterns in cross section indicated that the crystallographic orientation between LAO and wurtzite GaN was: [3 0 2]LAO parallel to [112¯0]GaN, [2¯03]LAO parallel to [11¯00]GaN and [0 1 0]LAO parallel to [0 0 0 1]GaN, the mismatches were â4.43%, â2.86% and â0.31%, respectively. When the incident beam parallel (or perpendicular) to the [0 0 0 1] direction of GaN, the FWHM values of Ï-scans reached the minimum (or maximum). The a-GaN film was found to have steps along [101¯0] direction and strips coalesced parallel to [0 0 0 1] direction. The PL intensity of the emission peak around 364 nm reduced a lot when the polarization changed from Eâ¥c to E||c.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Tingting Jia, Shengming Zhou, Hao Teng, Hui Lin, Jun Wang, Jianqi Liu, Yongxin Qiu, Jun Huang, Kai Huang, Feng Bao, Ke Xu,