| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5359917 | Applied Surface Science | 2014 | 6 Pages |
Abstract
In this study the proof of principle of the use of naked semiconductor directly generated on metal oxide surface as mediators in gas sensing is provided. Successive ionic layer absorption and reaction (SILAR) technique has been applied to sensitize a WO3 thin film with CdS quantum dots. Response to gases of bare WO3 is deeply modified: quantum dots dramatically increase the metal oxide conductance, otherwise rather poor, and modify the capability of detecting environmental pollutants, such as CO and NO2. A modified sensing mechanism is proposed to rationalize the mediation exerted by the semiconducting active layer on the interaction between gaseous species and WO3 surface.
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Authors
Isabella Concina, Elisabetta Comini, Saulius Kaciulis, Giorgio Sberveglieri,