| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5359933 | Applied Surface Science | 2014 | 7 Pages |
Abstract
A successful atomic manipulation may be influenced by many factors such as bias voltage, tip structure and manipulation modes et al. Here, performing atomic-scale simulations with ab initio based many-body potentials, we have studied the vertical and lateral manipulation of a single Co adatom on metallic Cu surfaces using STM tips at zero bias voltage. A suitable scheme for manipulating the Co adatom on a Cu(5Â 5Â 4) surface is proposed. The optimum tip height for a successful lateral manipulation is determined and the reliability of the lateral manipulation of the adatom on the stepped surface is assessed.
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Authors
L. Liu, R.Z. Huang, Y.S.N. Sun, C.C. Du, R.J. Zhang, Y.X. Zheng, Y.X. Wu,