| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360158 | Applied Surface Science | 2009 | 4 Pages |
Abstract
Phosphorus-doped ZnO nanoneedle arrays were prepared by phosphorus diffusion from InP substrate using a pulsed laser deposition (PLD) technique. The optical properties of ZnO nanoneedle were investigated by photoluminescence (PL) spectroscopy. Low-temperature photoluminescence spectrum measurements exhibited five acceptor-related emission peaks. The excitation intensity and temperature dependent photoluminescence spectra confirmed that the emission peaks corresponded to neutral-acceptor bound exciton, free electron to acceptor, donor-acceptor pairs, and their first and second photon replicas transitions. Acceptor-binding energy was determined to be 135-167Â meV, which agrees well with the best-fitting result of the temperature dependent photoluminescence measurements and is reasonable in terms of theoretic prediction in ZnO.
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Authors
D.Q. Yu, L.Z. Hu, J. Li, H. Hu, H.Q. Zhang, J.M. Bian, J.X. Zhu, S.S. Qiao, X. Chen, B. Wang,