Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5360206 | Applied Surface Science | 2009 | 4 Pages |
Abstract
Injection of spin-polarized current into spintronic devices is a challenge to the semiconductor physicists and technologists. II-VI compound semiconductors can act as the spin aligner on the top of GaAs light emitting diode. However, II-VI compound semiconductor like Cd1âxMnxTe is still suffering from contacting problem. Application of electroless deposited magnetic NiP:Mn contact would enhance efficient current injection into Cd1âxMnxTe than the standard gold contact. A technique for electroless deposition of NiP:Mn on Cd1âxMnxTe have been described here. The electronic and magnetic properties of the contact material NiP:Mn and the contact performance of NiP:Mn relative to evaporated gold have been evaluated. The contact fulfills the requirements of resistivity and ferromagnetism for application to Cd1âxMnxTe.
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Authors
Pushan Banerjee, Biswajit Ghosh,