Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5360221 | Applied Surface Science | 2010 | 4 Pages |
Abstract
We have developed the advanced nitric acid oxidation of Si (NAOS) method to form relatively thick (5-10 nm) SiO2/Si structure with good electrical characteristics. This method simply involves immersion of Si in 68 wt% nitric acid aqueous solutions at 120 °C with polysilazane films. Fourier transform infrared absorption (FT-IR) measurements show that the atomic density of the NAOS SiO2 layer is considerably high even without post-oxidation anneal (POA), i.e., 2.28 Ã 1022 atoms/cm2, and it increases by POA at 400 °C in wet-oxygen (2.32 Ã 1022 atoms/cm2) or dry-oxygen (2.30 Ã 1022 atoms/cm2). The leakage current density is considerably low (e.g., 10â5 A/cm2 at 8 MV/cm) and it is greatly decreased (10â8 A/cm2 at 8 MV/cm) by POA at 400 °C in wet-oxygen. POA in wet-oxygen increases the atomic density of the SiO2 layer, and decreases the density of oxide fixed positive charges.
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Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yousuke Fukaya, Takashi Yanase, Yasushi Kubota, Shigeki Imai, Taketoshi Matsumoto, Hikaru Kobayashi,