| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360222 | Applied Surface Science | 2010 | 4 Pages |
Abstract
Near liquid nitrogen temperature, the current through the lateral Al/n-GaN/Al structures was limited by space charges. The Al/n-GaN contacts exhibited a very low Schottky barrier height below or around 0.2Â eV. A new possible mechanism responsible for the temperature dependence of the ideality factor is proposed.
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Authors
Zs. J. Horváth, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pécz,