Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5360223 | Applied Surface Science | 2010 | 5 Pages |
Abstract
Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. Φ-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120° to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 °C is applied.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Å . Chromik, P. Gierlowski, M. Å panková, E. DobroÄka, I. Vávra, V. Å trbÃk, T. Lalinský, M. Sojková, J. Liday, P. VogrinÄiÄ, J.P. Espinos,