Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5360227 | Applied Surface Science | 2010 | 6 Pages |
Abstract
A comparative analysis of the properties of the non-passivated and S-passivated GaSb(1Â 0Â 0) surfaces has been performed through PL, AFM and RHEED characterization. The samples treated with a 1Â M Na2S aqueous solution demonstrate an increase in the 5Â K PL intensity. According to AFM data, the annealing of the S-passivated GaSb(1Â 0Â 0) leads to the formation of the clean flat (1Â 0Â 0) surface. Moreover, after annealing the PL intensity of the S-passivated GaSb(1Â 0Â 0) surfaces decreases by 20%, whereas for the non-passivated samples it drops by more than a factor of 4. The method of wet sulfur passivation has shown great effectiveness in pre-epitaxial processing for LPE and MBE growth of the GaSb-related materials for optoelectronics.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
E.V. Kunitsyna, T.V. L'vova, M.S. Dunaevskii, Ya.V. Terent'ev, A.N. Semenov, V.A. Solov'ev, B.Ya. Meltser, S.V. Ivanov, Yu.P. Yakovlev,