Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5360233 | Applied Surface Science | 2010 | 4 Pages |
Abstract
Pairs of self-assembled InMnAs quantum dot structures and reference epitaxial layers (0 < x < 0.13) were prepared on GaAs substrates by low-pressure metal organic vapour phase epitaxy. Magnetic moment measurements indicated that reference epitaxial layer had a Curie temperature of 343 K independent on the composition. On the other hand, the quantum dots prepared under Stranski-Krastanov growth mode from the identical gas phase composition showed a lower value of Curie temperature. This value varied from 41 to 235 K in relation to the material composition. Moiré fringes at transmission electron microscopy plan view were used for characterization of strain in InMnAs quantum dot structures.
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Authors
J. Novák, I. Vávra, Z. Križanová, S. Hasenöhrl, J. Å oltýs, M. Reiffers, P. Å trichovanec,