| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360236 | Applied Surface Science | 2010 | 4 Pages |
Abstract
Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7âx thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2Â K to 300Â K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7âx thin film-PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7âx films in the nano-scale vicinity of the junction interface under applied electrical fields.
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Authors
A. Plecenik, M. Tomasek, T. Plecenik, M. Truchly, J. Noskovic, M. Zahoran, T. Roch, M. Belogolovskii, M. Spankova, S. Chromik, P. Kus,