| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360272 | Applied Surface Science | 2013 | 4 Pages |
Abstract
⺠Ion beam deposition was used to implant Xe in a-C and a-Si for brachytherapy seeds. ⺠High Xe dose was implanted with energy much lower than conventional implantation. ⺠Xe are incorporated as small clusters in a-C and dispersed in a-Si.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
F.C. Marques, P.F. Barbieri, G.A. Viana, D.S. da Silva,