Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5360277 | Applied Surface Science | 2013 | 8 Pages |
Abstract
⺠Ge nanostructures synthesized by RTP of sputtered Ge on Si (1 0 0) at 400 to 800 °C for 15 s. ⺠As the annealing time increased, the Ge islands' size became more uniform and dense. ⺠Increases in annealing time improved the crystallinity of the Ge nanocrystals. ⺠Annealing temperature influenced the nanocrystals formation and enhances photo currents of MSM photodetector.
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Authors
A.F. Abd Rahim, M.R. Hashim, N.K. Ali, M. Rusop, M.D. Johan Ooi, M.Z.M. Yusoff,