Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

► The effects of RFS properties of the films were a 2.5 wt% TiO2-doped In2O3 target. ► The ITiO thin films produced strong (2 2 2) (2θ = 30.61°) peaks of a preferred orientation regardless. ► The deposition rate was 20-60 nm/min under the experimental conditions of gas pressure and RFS power. ► The lowest resistivity of 1.2 × 10−4 Ω cm and the average optical transmittance of 75%.