Article ID Journal Published Year Pages File Type
5360388 Applied Surface Science 2013 5 Pages PDF
Abstract
► Proton-irradiated 4H-SiC was probed by micro-Raman scattering spectroscopy. ► The changes of the line-shape and peak position in LOPC mode were analyzed. ► The estimated penetration depths from 6 to 8 MeV energy protons were 180 and 300 μm, respectively.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy
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