Microstructural characterization of CIGS formation using different selenization processes

Cu(In1−x,Gax)Se2 (CIGS) thin films were prepared by the sputtering of CuInGa precursors followed by chalcogenization via an isothermal (one-zone) selenization and a two-zone selenization. The effects of two selenization processes on the microstructural characteristics of CIGS films were also studied. In addition, we varied the selenization temperature for the two processes between 450 °C and 580 °C to investigate this effect on the microstructural characteristics and compositions of the CIGS films. The results indicated that the CIGS thin films formed using isothermal selenization had dense grain structure whose grains increased in size after an increase in the selenized temperature. However, the Se/(Cu + In + Ga) ratios of the films indicated that Se was distributed non-uniformly in the films, with Se-saturated CIGS present on the front side of the films and incompletely formed CIGS on the back side. In addition, it was noticed that Ga accumulated in large amounts in the films, depending on the chemical affinity between In and Se. Comparatively, the films prepared using two-zone selenization showed Ga accumulation that was only slightly greater than that in the films fabricated by the isothermal selenization. It is likely that the slow selenization of the CIG precursors reduced the extent of Ga accumulation because of the presence of Se in insufficient amounts. However, the presence of Se in insufficient amounts may also format the CIGS thin films with a porous microstructure.

► CIGS thin films is strongly affected by the choice of the selenization process. ► Isothermal selenization resulted in the over-concentration of Se in the CIGS thin films. ► Two-zone selenization showed the poor crystallinity of CIGS with low Se concentration. ► Ga accumulation in large amounts in the films depends on the selenization temperature. ► The surface morphology of CIGS films is determined by the selenized extent of precursors.