| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360413 | Applied Surface Science | 2013 | 6 Pages |
Abstract
⺠Deposition of SiC film from polycarbosilane precursor by modified CVD method. ⺠Polymer to ceramics conversion at moderate temperature of 800, 900 and 1000 °C. ⺠Formation of β-SiC and α-SiC films on silicon (1 1 1) wafer at moderate temperatures. ⺠Enhanced hardness(18 GPa), toughness of coated samples than that of uncoated sample. ⺠Promising material for MEMS application.
Related Topics
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Chemistry
Physical and Theoretical Chemistry
Authors
Jonaki Mukherjee, Ashok Ranjan, A.K. Saxena, Probal Kumar Das, Rajat Banerjee,
