| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360414 | Applied Surface Science | 2013 | 6 Pages |
Abstract
⺠Highly c-axis oriented Ta:AlN films were deposited on Si(1 0 0) substrate using DC magnetron reactive sputtering at 400 °C. ⺠A large enhancement of piezoelectric response with piezoelectric coefficient of 8.2 pC/N was obtained. ⺠The mechanism of the large enhancement in piezoelectric response is supposed to be enhancement of internal nitrogen displacement under electric field.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Hongyan Liu, Fei Zeng, Guangsheng Tang, Feng Pan,