| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360429 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠BaTiO3 films were prepared on (1 0 0) Si substrates @ 500 °C by rf magnetron sputtering. ⺠The effects of gas pressure and target power on the property of BaTiO3 were studied. ⺠Under high target power, ferroelectric BaTiO3 films were obtained without annealing. ⺠These ferroelectric films showed a (0 0 1) texture and a smooth surface with Ra â¼Â 1.7 nm. ⺠These films showed good ferroelectric and dielectric properties at room temperature.
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Authors
Meiling Yuan, Wei Zhang, Xianyang Wang, Wei Pan, Li Wang, Jun Ouyang,