Article ID Journal Published Year Pages File Type
5360445 Applied Surface Science 2013 4 Pages PDF
Abstract
► The effects of Ts on the micro-structure and electrical properties of boron-doped Si-NC thin films were investigated. ► The phase separation of annealed SRSO thin films was hindered when the Ts was increased from 373 K to 676 K. ► When the Ts was increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%. ► The dark conductivity of 1373 K-annealed thin films reduced from 8 × 10−3 S/cm to 5.5 × 10−5 S/cm when the Ts was increased from 373 K to 676 K.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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