Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5360445 | Applied Surface Science | 2013 | 4 Pages |
Abstract
⺠The effects of Ts on the micro-structure and electrical properties of boron-doped Si-NC thin films were investigated. ⺠The phase separation of annealed SRSO thin films was hindered when the Ts was increased from 373 K to 676 K. ⺠When the Ts was increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%. ⺠The dark conductivity of 1373 K-annealed thin films reduced from 8 Ã 10â3 S/cm to 5.5 Ã 10â5 S/cm when the Ts was increased from 373 K to 676 K.
Related Topics
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Authors
Junjun Huang, Yuheng Zeng, Ruiqin Tan, Weiyan Wang, Ye Yang, Ning Dai, Weijie Song,