Article ID Journal Published Year Pages File Type
5360619 Applied Surface Science 2013 6 Pages PDF
Abstract
► Studies of the initial stages in the formation of Sc and ScN structures on GaN. ► In the adsorption of Sc on the GaN the T4 site is the most stable geometry. ► When a Sc replaces a Ga of the first monolayer the displaced Ga occupies a T4 site. ► For a full monolayer of Sc there is formation of ScN in the wurtzite phase.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Initial stages of the adsorption of Sc and ScN thin films on GaN(0 0 0 1): First principles calculations
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