Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5360620 | Applied Surface Science | 2013 | 6 Pages |
Abstract
⺠Cu(In,Ga)Se2 films obtained from different targets were compared. ⺠The three kinds of targets for CIGSe were Cu-In-Ga, Cu-In-Ga2Se3, or Cu-Ga-Se2Se3. ⺠No reports had studied the selenization above 600 °C due to vaporization problem. ⺠The selenization problems were presented and selenization mechanism was proposed. ⺠Our CIGSe film selenized at 650 °C was dense and had singe-grain thickness of 1.5-3 μm.
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Authors
Dong-Hau Kuo, Yung-Chin Tu, Mehrdad Monsefi,