Effects of selenization parameters on growth characteristics of the Cu(In,Ga)Se2 films deposited by sputtering with a Cu-In-Ga, Cu-In-Ga2Se3, or Cu-Ga-In2Se3 target and a subsequent selenization procedure at 550-700 °C

► Cu(In,Ga)Se2 films obtained from different targets were compared. ► The three kinds of targets for CIGSe were Cu-In-Ga, Cu-In-Ga2Se3, or Cu-Ga-Se2Se3. ► No reports had studied the selenization above 600 °C due to vaporization problem. ► The selenization problems were presented and selenization mechanism was proposed. ► Our CIGSe film selenized at 650 °C was dense and had singe-grain thickness of 1.5-3 μm.