| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360637 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠Ni silicidation in poly Si is possible by a NiCl plasma treatment. ⺠The Ni and Si depth profile is uniform in the Ni silicide film. ⺠The Ni silicide growth depends on the plasma power and the substrate temperature. ⺠We discuss the growth mechanism of Ni silicide through the NiCl plasma treatment.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
K. Kanomata, K. Momiyama, S. Kubota, T. Suzuki, F. Hirose,