| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360639 | Applied Surface Science | 2013 | 5 Pages |
Abstract
⺠In0.15Ga0.85As film has been deposited on different GaAs pregrowth surface by MBE. ⺠As coverage and roughness influence heteroepitaxial growth in the earliest stages. ⺠STM and RHEED patterns reflect the morphology and reconstruction of film surface.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Qing Zhou, Zijiang Luo, Ke Liu, Xiang Guo, Bichan Zhang, Xun Zhou, Jihong Wang, Zhao Ding,