Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5360644 | Applied Surface Science | 2013 | 7 Pages |
Abstract
⺠The porous silicon (PS) with intermediate pore size (50-200 nm) was successfully prepared using electrochemical etching method without additional oxidizing agents and illumination. ⺠The pore morphology of PS was changed noticeably by varying the etching time. ⺠Optimized PS structure has a high porosity of 75% and direct excellent gas diffusion channels, exhibiting good and desirable gas-sensing properties toward sub-ppm NO2 at room temperature. ⺠NO2-sensing mechanism of PS was also discussed. ⺠The PS kept its gas-sensing characteristic during four weeks.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Mingda Li, Ming Hu, Qinglin Liu, Shuangyun Ma, Peng Sun,