| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5360797 | Applied Surface Science | 2008 | 4 Pages |
Abstract
Four layered metal-insulator-pp+ semiconductor MIS solar cell device was simulated using a comprehensive numerical model. The semiconductor layer was assumed to be nonuniformly-doped in which additional drift electric field inside the semiconductor could be generated. The effects of the electrostatic and kinetic properties of the electronic states at the insulator-semiconductor interface were taken into account. The influences of the operating temperature on the device performance were studied in detail.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Mahmoud Shaban, M. Abdel-Gawad El-Sayed,