| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5361045 | Applied Surface Science | 2014 | 33 Pages |
Abstract
- Novel Lu2WO6:Eu3+ luminescence films with micron-thickness were first fabricated on Si (1Â 0Â 0) wafer by a chemical route.
- Lu2WO6:Eu3+ films with dense and homogeneous morphology exhibit good scintillation properties.
- Luminescence mechanism associated with Eu3+ site occupation and possible energy transfer of Lu2WO6:Eu3+ films have also been proposed.
- A new method of hydrophilizing Si (1Â 0Â 0) wafers without HF is proposed.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Xiang-Yang Chen, Zhi-Jun Zhang, Lin-Lin Zhu, Meng Xu, Hong Wang, Ai-Guo Li, Jing-Tai Zhao,