| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5361055 | Applied Surface Science | 2008 | 5 Pages |
Abstract
We study the effect of the GaAsN narrow QWs on the optical properties of the GaInNAsSb/GaAs QWs using photoluminescence spectroscopy. A drastic effect of the N-rich layers on the QW photoluminesecnec (PL) intensity was observed with a strong influence of the spacer thickness. In the PL spectra a broad band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. Based on calculations from experimental data, we have identified the low QW peak energy to the E1-H1 transition using the shear deformation potentials report Îp/p = 0.24.
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Authors
S. Ben Bouzid, W. Zaghdoudi, A. Hamdouni, N. Ben Sedrine, F. Bousbih, J.C. Harmand, R. Chtourou,