Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5361070 | Applied Surface Science | 2008 | 4 Pages |
Abstract
Highly oriented silicon nanowire (SiNW) layer was fabricated by etching Si substrate in HF/(AgNO3 + Na2S2O8) solution at 50 °C. The morphology and the photoluminescence (PL) of the etched layer as a function of Na2S2O8 concentration were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX). It was demonstrated that the morphology of the etched layers depends on the Na2S2O8 concentration. Room-temperature photoluminescence (PL) from etched layer was observed. It was found that the utilisation of Na2S2O8 decreases PL peak intensity. Finally, a discussion on the formation process of the silicon nanowires is presented.
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Authors
R. Douani, T. Hadjersi, R. Boukherroub, L. Adour, A. Manseri,