Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5361135 | Applied Surface Science | 2009 | 4 Pages |
Abstract
Ba(Ti1âx,Nix)O3 thin films were prepared on fused quartz substrates by a sol-gel process. X-ray diffraction and Raman scattering measurements showed that the films are of pseudo-cubic perovskite structure with random orientation and the change of lattice constant caused by Ni-doping with different concentrations is very small. Optical transmittance spectra indicated that Ni-doping has an obvious effect on the energy band structure. The energy gap of Ba(Ti1âx,Nix)O3 decreased linearly with the increase of Ni concentration. It indicates that the adjusting of band gap can be achieved by controlling the Ni-doping content accurately in Ba(Ti1âx,Nix)O3 thin films. This has potential application in devices based on ferroelectric thin films.
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Authors
Juntao Yang, Ting Zhang, Manman Ni, Linghong Ding, W.F. Zhang,