| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5361147 | Applied Surface Science | 2009 | 4 Pages |
Abstract
ZnS thin films have been deposited by dip technique using succinic acid as a complexing agent. The structural and morphological characterizations of films have been investigated by X-ray diffraction, scanning electron microscope. X-ray pattern shows crystalline has hexagonal structure. The films show that good optical properties high absorption and band gap value was found to be 3.7 eV. The specific conductivity of the film was found to be in order of 10â5 (Ω cm)â1 and showing n-type conduction.
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Authors
P.P. Hankare, P.A. Chate, D.J. Sathe, A.A. Patil,