| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5361171 | Applied Surface Science | 2009 | 4 Pages |
Abstract
Cd1âxZnxTe thin film fabrication is necessary for its photovoltaic and imaging applications in large scale. Thermally annealed and thereby interdiffused r.f. sputtered multilayers comprising of CdTe and ZnTe have been utilized here for the fabrication of Cd1âxZnxTe thin films. Photoluminescence and change of resistance of the multilayer under illumination were studied using different annealing temperatures and varying number of repetitions. It was found that three number of repetitions annealed at 300 °C exhibited the best results.
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Authors
Pushan Banerjee, Rajiv Ganguly, Biswajit Ghosh,