Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5361177 | Applied Surface Science | 2009 | 5 Pages |
Abstract
A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
F.N. Dultsev, V.G. Kesler,