| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5361235 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠Thickness of the HfO2 layers in HfO2/SiO2/Si(1 0 0) films were measured by XPS. ⺠The contribution of the interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced. ⺠The thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2/SiO2/Si(1 0 0) films. ⺠The thickness of HfO2 overlayers in a series of HfO2/SiO2/Si(1 0 0) films was verified by mutual calibration with XPS and TEM. ⺠The effective attenuation length of the photoelectrons could be determined.
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Authors
Kyung Joong Kim, Seung Mi Lee, Jong Shik Jang, Mona Moret,