Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5361248 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠The Ge/Si islands were prepared by ion beam sputtering deposition. ⺠The intermixing led to the reappearance of low aspect ratio islands. ⺠Short islands did not grow along the constant ratio of 11:1 (diameter:height). ⺠The islands always grew faster in the vertical direction. ⺠The inter-diffusion, surface diffusion and amount of Ge determined the evolution.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jie Yang, Yingxia Jin, Chong Wang, Liang Li, Dongping Tao, Yu Yang,