Article ID Journal Published Year Pages File Type
5361248 Applied Surface Science 2012 6 Pages PDF
Abstract
► The Ge/Si islands were prepared by ion beam sputtering deposition. ► The intermixing led to the reappearance of low aspect ratio islands. ► Short islands did not grow along the constant ratio of 11:1 (diameter:height). ► The islands always grew faster in the vertical direction. ► The inter-diffusion, surface diffusion and amount of Ge determined the evolution.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Authors
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