| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5361419 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠Epitaxial (1 1 1) oriented CeO2 layers were grown on Cu(1 1 1)) surface at different substrate temperatures. ⺠The CeO2 layers grew by formation of flat islands. ⺠Morphology of CeO2 layers was determined from RHEED profile analysis. ⺠The contraction of CeO2 crystal lattice with respect to the bulk value was observed. ⺠XPS measurements have shown that the CeO2 structure contained only Ce4+ oxidation state.
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Authors
Karel MaÅ¡ek, Jan Beran, VladimÃr MatolÃn,