Article ID Journal Published Year Pages File Type
5361489 Applied Surface Science 2012 9 Pages PDF
Abstract
► nC-Si/SiOx:H thin films prepared at low temperature He diluted (SiH4 + CO2) plasma. ► Three layers growth structure identified by FESEM and modeling on ellipsometry data. ► Control of nanocrystallization with simultaneous oxygenation at optimum plasma pressure.
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Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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Structural investigation of nC-Si/SiOx:H thin films from He diluted (SiH4 + CO2) plasma at low temperature
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