Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5361527 | Applied Surface Science | 2008 | 6 Pages |
Abstract
We suppose either that during their epitaxial growth all of the investigated layers were unintentionally doped with excess atoms of one component, vacancies of other or that dangling bonds are present. Therefore, in the range of low temperatures, the possible and dominant conduction mechanism is conduction via such defects, with electrons moving by thermally activated hopping.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Andrzej Wolkenberg, Tomasz PrzesÅawski,