Article ID Journal Published Year Pages File Type
5361562 Applied Surface Science 2008 5 Pages PDF
Abstract
F was incorporated into interfacial layer easily by using F2-treated Ge substrate. These results suggest that interface defect of HfO2/Ge gate stack structure could be passivated by F effectively.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface
Authors
, , , ,