Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5361573 | Applied Surface Science | 2008 | 4 Pages |
Abstract
We report on the fabrication of pentacene thin-film transistors (TFTs) utilizing a spun methyl siloxane-based spin-on-glass (SOG) dielectric and show that these devices can give a similar electrical performance as achieved by using pentacene TFTs with a silicon dioxide (SiO2) dielectric. To improve the electrical performance of pentacene TFTs with the SOG dielectric, we employed a hybrid dielectric of an SOG/cross-linked poly-4-vinylphenol (PVP) polymer. The PVP film was deposited onto the spun SOG dielectric prior to pentacene evaporation, resulting in an improvement of the saturation field effect mobility (μsat) from 0.01 cm2/(V s) to 0.76 cm2/(V s). The good surface morphology and the matching surface energy of the SOG dielectric that was modified with the polymer thin film allow the optimized growth of crystalline pentacene domains whose nuclei are embedded in an amorphous phase.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Sang-Il Shin, Jae-Hong Kwon, Jung-Hoon Seo, Byeong-Kwon Ju,