| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5361717 | Applied Surface Science | 2012 | 6 Pages |
Abstract
⺠Deposit thin Ni-Co-P alloy layers with different concentration of Ni, Co and P on the silicon substrate. ⺠Use complete wet process for the diffusion barrier alloy deposition. ⺠The barrier properties degraded with increasing the concentration of Co i.e. decreasing the P. ⺠The lower Co and higher P contents alloy film act as a good diffusion barrier up to 500 °C.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Anuj Kumar, Mukesh Kumar, Dinesh Kumar,