Article ID Journal Published Year Pages File Type
5361811 Applied Surface Science 2011 5 Pages PDF
Abstract
► GZO thin films were deposited by PLD with the various Ga doping. ► The carrier concentration and oxygen vacancies in the GZO thin films increased with an increase of Ga doping. ► The 3.0% Ga doped thin film exhibited the lowest resistivity as low as 3.63 × 10−4 Ω cm. ► The lower barrier height of grain boundaries would cause the lower resistivity.
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Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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Influence of the grain boundary barrier height on the electrical properties of Gallium doped ZnO thin films
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