| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5361861 | Applied Surface Science | 2011 | 8 Pages |
Abstract
⺠The effect of metallization of semiconductor particles is explored extensively. But the real involvement of C1s level in Degussa P25 and Ag deposited Degussa P25 has not been explored. ⺠The beneficial effects of silver deposit and the incorporated C1s levels for the trapping of electrons and as effective adsorbent site to concentrate the pollutant molecules around the TiO2 particles is explained in detail. ⺠The incorporated carbon can possibly indirectly prevent recombination of eâ - h+ pairs. ⺠The beneficial effect of C1s level and silver metal deposit is explained along with the surface Plasmon adsorption which makes the catalyst more efficient.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
L. Gomathi Devi, K. Mohan Reddy,