Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5361968 | Applied Surface Science | 2008 | 4 Pages |
Abstract
ZnO films were deposited on indium tin oxide (ITO), which formed the transparent conductive layer (TCL) of a GaN-based light-emitting diode (LED), by ultrasonic spraying pyrolysis to increase the light output power. The ZnO nanotexture was formed by treating the as-deposited ZnO films with hydrogen. The root mean square (RMS) roughness increased from 4.47 to 7.89Â nm before hydrogen treatment to 10.82-15.81Â nm after hydrogen treatment for 20Â min. Typical current-voltage (I-V) characteristics of the GaN-based LEDs with a ZnO nanotexture layer have a forward-bias voltage of 3.25Â V at an injection current of 20Â mA. The light output power of a GaN-based LED with a ZnO nanotexture layer improved to as much as about 27.5% at a forward current of 20Â mA.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Lung-Chien Chen, Cheng-Ban Chung,