Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5361980 | Applied Surface Science | 2008 | 5 Pages |
Abstract
To compare the annealing effects on GaMnAs-doped with Zn (GaMnAs:Zn) and undoped GaMnAs (u-GaMnAs) epilayers, we grew GaMnAs thin films at 200 °C by molecular beam epitaxy (MBE) on GaAs substrates, and they were annealed at temperatures ranging from 220 °C to 380 °C for 100 min in air. These epilayers were characterized by high-resolution X-ray diffraction (XRD), electrical, and magnetic measurements. A maximum resistivity at temperatures Tm close to the Curie temperatures Tc was observed from the measurement of the temperature-dependent resistivity Ï(T) for both the GaMnAs:Zn and the u-GaMnAs samples. We found, however, that the maximum temperature Tm observed for GaMnAs:Zn epilayers increased with increasing annealing temperature, which was different from the result with the u-GaMnAs epilayers. The formation of GaAs:Zn and MnAs or Mn-Zn-As complexes with increasing annealing temperature is most likely responsible for the differences in appearance.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
H. Nakagawa, J.T. Asubar, Y. Jinbo, N. Uchitomi,