| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5362114 | Applied Surface Science | 2012 | 5 Pages |
Abstract
⺠We attain ultrafast recombination lifetimes of 0.49 and 2.68 ns in the Se-treated Si porous structure. ⺠The fast recombination rate is considered to origin from the direct radiative recombination induced by surface modification. ⺠Excitation wavelength- and temperature-dependent PL spectra are carried out. ⺠A near-infrared emission band with wavelength around the optimal energy region of light-transfer in optical fiber is observed. ⺠PLE spectrum indicates the near-infrared PL band is due to recombination in defect states.
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Authors
L.H. Lin, Z.C. Li, J.Y. Feng, Z.J. Zhang,