Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N+ implanted silicon

► SiOxNy layers were synthesized by high-temperature (1050 °C) annealing in oxidizing ambient of plasma immersion N+ ion implanted Si substrates. ► The IRSE spectra analysis of the dielectric functions showed that, depending on N+ fluence (1016-1018 N+/cm2) and annealing duration (10 and 20 min) the grown layers were either as silicon oxynitride with considerably low N content or silicon dioxide enriched with nitrogen. ► SiN, SiNO and SiSi chemical bonds in the silicon oxide network were identified by Infrared ellipsometry and confirmed by X-ray Photoelectron Spectroscopy.